Cart (Loading....) | Create Account
Close category search window

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Wu, F. ; Department of Materials, University of California, Santa Barbara, California 93106, USA ; Tyagi, A. ; Young, E. C. ; Romanov, A. E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Semipolar GaN-based light emitting devices show great promise because of reduced polarization-related electric fields in the quantum wells and the potential for high indium uptake in InxGa1-xN quantum wells. In semipolar GaN, the (0001) slip plane is inclined with respect to the film normal, thus shear stresses are present on this plane for nominally misfitting layer growth. We present scattering contrast transmission electron microscopy studies of (1122) and (2021) semipolar GaN-based laser diode structures. Misfit dislocations were observed at the nominally misfitting heterointerfaces in the (1122) structures with line direction [1100] and Burgers vector in the (0001) plane. Similar observations are reported for the (2021) structures. Overall, the results are consistent with stress relaxation by threading dislocation glide.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 3 )

Date of Publication:

Feb 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.