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Growth of GaN single crystals and properties of homoepitaxial MOCVD layers

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2 Author(s)
Baranowski, J.M. ; Inst. of Exp. Phys., Warsaw Univ., Poland ; Porowski, S.

Recently high quality GaN plates have been grown from the solution in liquid gallium at N2 pressure up to 20 kbar and temperature close to 1600°C. These single crystals have been used as substrates for homoepitaxial growth of GaN layer by MOCVD. The influence of the polarity of the Ga or N terminated surface of the substrate on the quality of the homoepitaxial layer is discussed. The structural and optical properties of homoepitaxial layers are presented and discussed

Published in:

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Date of Conference:

29 Apr-3 May 1996

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