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Browse Journals & Magazines > Design & Test of Computers, I ...> Volume:28 Issue:1 Help

Modeling, Architecture, and Applications for Emerging Memory Technologies

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1 Author(s)
Yuan Xie ; Comput. Sci. & Eng. Dept., Pennsylvania State Univ., University Park, PA, USA

Spin-transfer torque RAM and phase-change RAM are vying to become the next-generation embedded memory, offering high speed, high density, and nonvolatility. This article discusses new opportunities and challenges presented by these two memory technologies with a particular emphasis on modeling and architecture design.

Published in:
Design & Test of Computers, IEEE  (Volume:28 ,  Issue: 1 )

Date of Publication: Jan.-Feb. 2011

Page(s):
44 - 51
ISSN :
0740-7475
INSPEC Accession Number:
11793680
Digital Object Identifier :
10.1109/MDT.2011.20
Product Type:
Journals & Magazines
Date of Current Version :
04 February 2011
Issue Date :
Jan.-Feb. 2011
Sponsored by :
IEEE Council on Electronic Design and Automation

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