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Modeling, Architecture, and Applications for Emerging Memory Technologies

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1 Author(s)
Yuan Xie ; Comput. Sci. & Eng. Dept., Pennsylvania State Univ., University Park, PA, USA

Spin-transfer torque RAM and phase-change RAM are vying to become the next-generation embedded memory, offering high speed, high density, and nonvolatility. This article discusses new opportunities and challenges presented by these two memory technologies with a particular emphasis on modeling and architecture design.

Published in:

Design & Test of Computers, IEEE  (Volume:28 ,  Issue: 1 )