Realization of Three-Dimensional Si and $ \hbox{SiO}_{2}$ Nanowall Structures Using Reactive Ion Etching

We report the realization of highly sculptured 3-D silicon and SiO
₂
nanowall structures on silicon substrates with a single masking layer using a hydrogen-assisted deep reactive ion etching process. By precisely controlling the passivation and etching steps, it is possible to achieve the desired 3-D featured silicon structures, which are bases for SiO
₂
3-D nanowalls.