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Realization of Three-Dimensional Si and  \hbox {SiO}_{2} Nanowall Structures Using Reactive Ion Etching

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3 Author(s)
S. Azimi ; Nanoelectronic Center of Excellence, Thin Film and Nanoelectronic Laboratory, School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran ; A. Sandoughsaz ; S. Mohajerzadeh

We report the realization of highly sculptured 3-D silicon and SiO2 nanowall structures on silicon substrates with a single masking layer using a hydrogen-assisted deep reactive ion etching process. By precisely controlling the passivation and etching steps, it is possible to achieve the desired 3-D featured silicon structures, which are bases for SiO2 3-D nanowalls.

Published in:

Journal of Microelectromechanical Systems  (Volume:20 ,  Issue: 2 )