By Topic

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wang, Wei-Lin ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan ; Peng, Chun-Yen ; Ho, Yen-Teng ; Chuang, Shu-Chang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The crystallographic orientations of m-plane ZnO on (112) LaAlO3 (LAO) substrate are [1210]ZnO||[111]LAO and [0001]ZnO||[110]LAO. The defects in m-plane ZnO have been systematically investigated using cross section and plan-view transmission electron microscopy (TEM). High-resolution TEM observations in cross section show misfit dislocations and basal stacking faults (BSFs) at the ZnO/LAO interface. In the films, threading dislocations (TDs) with 1/3<1120> Burgers vectors are distributed on the basal plane, and BSFs have 1/6<2023> displacement vector. The densities of dislocations and BSFs are estimated to be 5.1×1010 cm-2 and 4.3×105 cm-1, respectively. In addition to TDs and BSFs, plan-view TEM examination also reveals that stacking mismatch boundaries mainly lie along the m-planes and they connect with planar defect segments along the r-planes.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:29 ,  Issue: 3 )