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Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

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5 Author(s)
Wang, Wei-Lin ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan ; Peng, Chun-Yen ; Ho, Yen-Teng ; Chuang, Shu-Chang
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The crystallographic orientations of m-plane ZnO on (112) LaAlO3 (LAO) substrate are [1210]ZnO||[111]LAO and [0001]ZnO||[110]LAO. The defects in m-plane ZnO have been systematically investigated using cross section and plan-view transmission electron microscopy (TEM). High-resolution TEM observations in cross section show misfit dislocations and basal stacking faults (BSFs) at the ZnO/LAO interface. In the films, threading dislocations (TDs) with 1/3<1120> Burgers vectors are distributed on the basal plane, and BSFs have 1/6<2023> displacement vector. The densities of dislocations and BSFs are estimated to be 5.1×1010 cm-2 and 4.3×105 cm-1, respectively. In addition to TDs and BSFs, plan-view TEM examination also reveals that stacking mismatch boundaries mainly lie along the m-planes and they connect with planar defect segments along the r-planes.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:29 ,  Issue: 3 )

Date of Publication:

May 2011

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