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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN

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9 Author(s)
Wu, Z. H. ; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China ; Tanikawa, T. ; Murase, T. ; Fang, Y.-Y.
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We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1101) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1102] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 5 )

Date of Publication:

Jan 2011

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