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An empirical model describing the MLC retention of charge trap flash memories

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5 Author(s)
Melde, T. ; Namlab gGmbH, Tech. Univ. Dresden, Dresden, Germany ; Hoffmann, R. ; Yurchuk, E. ; Paul, J.
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In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured results. The increasing non-linearity of the retention loss for thicker nitride layers is evaluated using this model. In addition, the strong temperature dependency of the TANOS stack is clarified.

Published in:

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Date of Conference:

17-21 Oct. 2010