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Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

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9 Author(s)
Arora, R. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Moen, K.A. ; Madan, A. ; Cressler, J.D.
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We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices. Asymmetric halo doping devices show less hot carrier degradation than symmetric halo doping devices. In addition, we investigate the dependence of hot carrier reliability on the metal contact spacing of the Source/Drain (S/D) terminals, the PC-PC spacing, and the RF device performance trade-offs that result.

Published in:

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Date of Conference:

17-21 Oct. 2010

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