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Temperature-dependent microwave noise characteristics are presented in an atomic-layer-deposited /AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (HEMT) (MISHEMT) on a Si substrate over a wide temperature range from -40 to 200 C. Typical noise parameters, including minimum noise figure , noise equivalent resistance , and associate gain , are measured over the whole temperature range. The conventional Schottky-gate HEMT with the same epistructure is also compared. The temperature dependences of and for the MISHEMT are found to be similar to those for the conventional HEMT, respectively, whereas less temperature dependence of is found in the GaN MISHEMT. The degradation rate of the noise performance of MISHEMT is found to be comparable to that of the other reported GaN HEMTs on SiC and sapphire substrates and also comparable to that of GaAs HEMTs.