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Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

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11 Author(s)
Bin Gao ; Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China ; Haowei Zhang ; Bing Chen ; Lifeng Liu
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The retention failure of bipolar oxide-based resistive switching memory is investigated. A new physical model is proposed to elucidate the typical retention failure behavior of the oxide-based resistive switching memory with a sudden resistance transition, which is quite different from that of the traditional memories. In the new proposed model, the temperature- and bias-dependent failure probability and failure time of the devices can be quantified. A temperature- and voltage-acceleration method is developed to evaluate the retention of resistive switching memories.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )

Date of Publication:

March 2011

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