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A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

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10 Author(s)
Chen, B. ; Shenzhen Grad. Sch., Peking Univ., Shenzhen, China ; Gao, B. ; Sheng, S.W. ; Liu, L.F.
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A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable RHRS/RLRS ratio are demonstrated in the HfOx-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )