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High-Gain Multiple-Gate Photodetector With Nanowires in the Channel

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4 Author(s)
Roudsari, A.F. ; Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada ; Saini, S.S. ; Nixon, O. ; Anantram, M.P.

A design of a photodetector with multiple gates and a modified channel, incorporating silicon nanowires, is proposed, and its performance is modeled. Working under lateral bipolar action, the gate/channel geometry increases the device photocurrent in the accumulation mode and leads to photoresponsivities of greater than .

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )