By Topic

Maximized Benefit of La–Al–O Higher- k Gate Dielectrics by Optimizing the La/Al Atomic Ratio

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Arimura, H. ; Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan ; Brown, S.L. ; Callegari, A. ; Kellock, Andrew
more authors

The benefit of La-Al-O higher-k gate dielectrics is maximized by optimizing the Al/(La+Al) atomic ratio. The Al/(La+Al) atomic ratio modulates the band gap, dielectric constant, and interface dipoles, resulting in change of energy band alignment. The La-Al-O film with an Al/(La+Al) atomic ratio of 0.25 yields a maximum leakage current reduction exceeding HfO2 and La2O3, owing to the optimized band alignment structure. Moreover, a SiON underlayer instead of SiO2 enables additional equivalent oxide thickness scaling down to 7.4 Å while maintaining the fully reduced leakage current with a gate-first process.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )