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Dry etching of LiNbO
In this letter, we report ridge waveguides fabricated on X-cut proton exchange (PE)-LiNbO3 using inductively coupled plasma (ICP) etching techniques. Various etching masks and fluorine gases are investigated. Smooth etched surfaces are obtained by using Cr as a mask combined with SF6/Ar etching gases. A high etch rate of 97.5 nm/min is achieved by using CHF3/Ar gases. Ridge waveguides with approximately 600nm depth, smooth surfaces and nearly vertical sidewalls are successfully fabricated using optimized etching conditions.
Published in:
Photonics Global Conference (PGC), 2010
Date of Conference: 14-16 Dec. 2010
- Page(s):
- 1 - 5
- Print ISBN:
- 978-1-4244-9882-6
- INSPEC Accession Number:
- 11822890
- Conference Location :
- Singapore
- Digital Object Identifier :
- 10.1109/PGC.2010.5706006
- Product Type:
- Conference Publications
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