Cart (Loading....) | Create Account
Close category search window

Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Yongshun Sun ; Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore ; Rusli ; Mingbin Yu ; Ruda, H.
more authors

P-i-n junctions were fabricated along silicon nanowires (SiNWs) via the conventional top-down approach using optical lithography. The process is fully CMOS compactable. Each device comprises 500 identical SiNWs connected in parallel, and each SiNW has a length of 1.0 μm and a triangular cross-section with dimensions of ~6 nm (base) by ~8 nm (height). Good rectifying electrical characteristics with a low reverse bias current of ~0.2 fA per SiNW is observed. The photocurrent spectral response of the SiNW p-i-n photodiodes exhibits three peaks between 400 nm to 700 nm, which arise due to local optical field enhancement associated with diffraction by the periodic SiNW array and interference in an air/SiO2/Si cavity.

Published in:

Photonics Global Conference (PGC), 2010

Date of Conference:

14-16 Dec. 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.