By Topic

Low-Power, High-Gain V-Band CMOS Low Noise Amplifier for Microwave Radiometer Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chun-Chieh Huang ; Institute of Computer and Communication Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. ; Hsin-Chih Kuo ; Tzuen-Hsi Huang ; Huey-Ru Chuang

A low power and high gain V-band CMOS low-noise amplifier (LNA) is proposed in this letter with a three-stage cascode topology. Using the gate-inductive gain-peaking technique to boost the gain, the proposed LNA achieves a good figure of merit (FOM) with less power consumption. This proposed LNA is fabricated in a 0.13 μm RF CMOS process, which achieves a peak gain of 21 dB at 53 GHz, a noise figure (NF) of 7.6 dB at 53 GHz, a 3 dB frequency bandwidth ranging from 51.3 to 55.8 GHz, an input 1 dB compression point (P1 dB) of - 25 dBm at 53 GHz, and an input third-order intercept point (IIP3) of -16 dBm. Also, the LNA consumes only 15.1 mW at a supply voltage of 1.5 V. The calculated FOM is 0.81 in average. Such a V-band LNA design is applicable to the cost-efficiency integration of a microwave radiometer front-end circuit over the operation frequency band of 52 to 56 GHz.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:21 ,  Issue: 2 )