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1/f noise in advanced CMOS transistors

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5 Author(s)
Nemirovsky, Y. ; Dept. of Electr. Eng., Technion - Israel Institute of Technology, Haifa, Israel ; Corcos, D. ; Brouk, I. ; Nemirovsky, A.
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This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of 1/f noise, models of 1/f noise, and ways of measuring 1/f noise are briefly reviewed.

Published in:

Instrumentation & Measurement Magazine, IEEE  (Volume:14 ,  Issue: 1 )

Date of Publication:

Feb. 2011

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