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Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons

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3 Author(s)
Betti, A. ; Dipt. di Ing. dell''Inf.: Elettron., Inf., Telecomun., Univ. di Pisa, Pisa, Italy ; Fiori, G. ; Iannaccone, G.

We have investigated the main scattering mechanisms affecting the mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects the mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared with the few experiments available in the literature.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 9 )