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Characterizing Voltage Linearity and Leakage Current of High Density \hbox {Al}_{2}\hbox {O}_{3}/\hbox {HfO}_{2}/\hbox {Al}_{2}\hbox {O}_{3} MIM Capacitors

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6 Author(s)
Sung Kyun Lee ; CE Specialty Process Development, MagnaChip Semiconductor Ltd., Cheongju, Korea ; Kwan Soo Kim ; Soon-Wook Kim ; Dal Jin Lee
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It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., ~t-2, whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., ~t-3. Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfC2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.

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IEEE Electron Device Letters  (Volume:32 ,  Issue: 3 )