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Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography

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7 Author(s)
Kwon, Gwangmin ; Department of Nanotechnology, Hanyang University, Seoul 133-791, Korea ; Ko, Kyeongkeun ; Lee, Haiwon ; Lim, Woongsun
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We describe methods to fabricate extreme ultraviolet lithography (EUVL) absorber mask patterns by atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. AFM lithography, based on anodization and cross-linking polymer resist, was applied to fabricate trench structures using only Ta and Cr/Ta bilayers. In particular, the top Cr layer was used not only as a hard mask to etch the underlying Ta in dry-etching, but also as an absorber material together with Ta. The Cr oxide or Ta with respect to Cr was eliminated due to the clear etch-selectivity of ICP dry-etching using C4F8 gas. This is a simple fabrication technique using AFM lithography fabricated metal trenches for the production of isolated metal structures as well as for producing EUVL absorber patterns.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 1 )

Date of Publication:

Jan 2011

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