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Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

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6 Author(s)
Griffoni, A. ; Electr. Eng. Dept., K.U. Leuven, Leuven, Belgium ; Chen, S.-H. ; Thijs, S. ; Linten, D.
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The turn-on behavior of high-voltage-tolerant nLDMOS SCRs is investigated during CDM ESD events. An early failure occurs because of gate-oxide damage. A device optimization is proposed, which improves the CDM ESD robustness up to 2.7x, unchanging the HBM ESD robustness.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010