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Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application

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18 Author(s)
SungJin Whang ; Adv. Process Team & Flash Device Dev., Hynix Semicond. Inc., Icheon, South Korea ; KiHong Lee ; DaeGyu Shin ; BeomYong Kim
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A novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell has been successfully developed, for the first time. The DC-SF cell consists of a surrounding floating gate with stacked dual control gate. With this structure, high coupling ratio, low voltage cell operation (program: 15V and erase: -11V), and wide P/E window (9.2V) can be obtained. Moreover, negligible FG-FG interference (12mV/V) is achieved due to the control gate shield effect. Then we propose 3D DC-SF NAND flash cell as the most promising candidate for 1Tb and beyond with stacked multi bit FG cell (2 ~ 4bit/cell).

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010