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High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

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63 Author(s)
Wu, C.C. ; R&D, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Lin, D.W. ; Keshavarzi, A. ; Huang, C.H.
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A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P Ion values of 1200/1100 μA/μm for Ioff=100nA/μm at 1V. Excellent device electrostatic control is demonstrated for gate length (Lgate) down to 20nm. Dual-Epitaxy and multiple stressors are essential to boost the device performance. Dual workfunction (WF) with an advanced High-K/Metal gate (HK/MG) stack is deployed in an integration-friendly CMOS process flow. This dual-WF approach provides excellent Vth roll-off immunity in the short-channel regime that allows properly positioning the long-channel device Vth. Enhanced 193nm immersion lithography has enabled the stringent requirements of the 22/20nm ground rules. Reliability of our advanced HK/MG stack is promising. Excellent SRAM static noise margin at 0.45V is reported.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010

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