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We demonstrate for the first time contact resistance reduction using dielectric dipole mitigated Schottky barrier height (SBH) tuning on a FinFET source/drain. Different techniques for forming a SiO2/AlOx dipole layer are investigated using diodes. FinFETs, with contacts containing a SBH tuning dipole layer, are also presented. Reduction of the SBH by 100meV from the AlOx/SiO2 dipole results in a 10Ω-μm2 reduction in specific contact resistivity (ρCO) and a 100Ω-μm reduction in FinFET source/drain resistance (RS/D). Larger reductions of ρCO should be possible if chemically formed or atomic-layer deposited SiO2 is used in the dipole layer instead of interfacial SiO2 due to the larger SBH reduction (ΔSBH ~300meV) obtained from these oxidation methods. Contact formation without the need for silicide makes this technique very promising for emerging devices, alternative channel materials, and sub-22nm CMOSFETS.
Electron Devices Meeting (IEDM), 2010 IEEE International
Date of Conference: 6-8 Dec. 2010