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A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability

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10 Author(s)
Chien, W.C. ; Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan ; Chen, Y.R. ; Chen, Y.C. ; Chuang, A.T.H.
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A thorough study of the switching mechanism for WOX ReRAM gives clues about how to improve its performance and reliability. Consequently, a 60 nm WOX ReRAM is achieved with excellent characteristics - 50ns fast switching, 106 cycling endurance, large MLC window, low read disturb of >; 109, and excellent 150°C/2,000Hrs data retention. Furthermore, the oxidation of the TiN barrier into an insulating TiNOX causes the WOX to protrude above the remaining TiN and thus creates field enhancement. The boosted electric field eliminates the need for an initial forming step.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010