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An anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs

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8 Author(s)
Liu, Zihong ; T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA ; Chang, P. ; Xiaojun Yu ; Jie Deng
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An anomalous correlation of gate leakage current and threshold voltage fluctuation in aggressively scaled MOSFETs is revealed and analyzed by statistical technique and a corresponding physical model is proposed. For a range of threshold voltage (Vt) design, gate leakage at fixed gate and drain bias increases with Vt before it decreases at higher Vt. The behavior can be accurately explained by a trade-off between two mechanisms (“two reversed functions”): Vt roll-off effect and gate leakage current density dependence on surface potential.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010

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