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Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG

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10 Author(s)
Song, X. ; Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan ; Suzuki, M. ; Saraya, T. ; Nishida, A.
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The static noise margin (SNM) as well as Vth, gm, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides Vth variability, DIBL variability degrades SRAM stability and its Vdd dependence while the variability of gm and body factor has only a small effect.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010