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Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

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28 Author(s)
Faynot, O. ; CEA-LETI Minatec, Grenoble, France ; Andrieu, F. ; Weber, O. ; Fenouillet-Beranger, C.
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Recent device developments and achievements have demonstrated that planar undoped channel Fully depleted SOI devices are becoming a serious alternative to Bulk technologies for 20nm node and below. We have proven this planar option to be easier to integrate than the non planar devices like FinFET. This paper gives an overview of the main advantages provided by this technology, as well as the key challenges that need to be addressed. Electrostatic integrity, drivability, within wafer variability and scalability are addressed through silicon data (down to 18nm gate length) and TCAD analyses. Solutions to the Multiple VT challenges and non logic devices (ESD, I/Os) are also reported.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010