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In 1991, M. Bruel (1) invented and patented the Smart Cut technology to fabricate Silicon On Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal layer from one wafer to another: implantation of gaseous ions in a single crystal wafer, direct bonding on a stiffener and splitting (Fig 1). The invention of this SOI process combined with the entrepreneurship of SOITEC paved the way to high quality SOI substrates mass production. Today, SOI is a mature product (up to 300mm diameter) and now developments are focused on the integration of new materials and functionalities in order to improve device performances and enlarge the application spectrum.