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Reliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding

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4 Author(s)
Chen, K.N. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Shaw, T.M. ; Cabral, C. ; Zuo, G.

We demonstrate a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding. Hybrid Cu-oxide hybrid bonding shows excellent bond quality and performances in terms of alignment, bond strength, and ambient permeation oxidation. Excellent performances of initial reliability and quality evaluations for Cu-oxide hybrid bonding are key milestones in proving manufacturability of 3D integration technology.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010