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Without requiring noble metal materials, a novel low-cost Ni2Si/TiO2/Ni2Si metal-insulator-metal (MIM) capac itor processed at 350°C has been developed using nickel fully sili cided (Ni-FUSI) amorphous silicon electrodes. A high capacitance density of 17 fF/μm2 along with a low top-electrode resistivity of ~38 μΩ · cm were achieved. At 25°C, this MIM capacitor also displays a good leakage current density of 6.4 × 10-6 A/cm2 at -1 MV/cm (-2.5 V) and a quadratic voltage coefficient a of 4110 ppm/V2. Schottky emission dominates the leakage current in low negative field (<;1 MV/cm), whereas Poole-Frenkel effect appears in high negative field (>;1.4 MV/cm). The Schottky barrier height ΦB at the Ni2Si/TiO2 interface was first extracted to be 0.8 eV, whereas the trap barrier height Φt in the TiO2 film was 0.39 eV. Material characterization further reveals that this structure is highly appropriate for future ultralarge-scale-integration technologies.