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Characteristics of a Novel Compliant Bump for 3-D Stacking With High-Density Inter-Chip Connections

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2 Author(s)
Naoya Watanabe ; Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan ; Tanemasa Asano

This paper reports on the detailed characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections. The novel compliant bump is a cone-shaped bump made of Au. It is fabricated using electroplating of the Au into undercut holes formed in a photoresist. Because the cone bump is easily deformed under a pressing load, it possesses superior properties for inter-chip connection. First, it suppresses a bonding failure by compensating for the bump-height deviation and the nonuniform bonding pressure, and consequently, offers high-density inter-chip connections of which number is at least 30 600 with 20 μm pitch. Second, it reduces the change in the transconductance gm of the metal-oxide-semiconductor field effect transistor (MOSFET) after chip stacking. In other words, it reduces the strain generation at the Si device level. Third, room-temperature bonding is achieved by mechanical caulking between the cone bumps and the doughnut-shaped electrodes.

Published in:

IEEE Transactions on Components, Packaging and Manufacturing Technology  (Volume:1 ,  Issue: 1 )