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A \beta -Ga _{2} O _{3} /GaN Schottky-Barrier Photodetector

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5 Author(s)
W. Y. Weng ; Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, TAIWAN ; T. J. Hsueh ; S. J. Chang ; G. J. Huang
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The authors report the formation of β-Ga2O3/GaN heterostructure and the fabrication of a β-Ga2O3/GaN bilayer photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-ultraviolet (UV) to near-UV contrast ratio of 200 when the device was biased at -1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 260 when biased at -10 V.

Published in:

IEEE Photonics Technology Letters  (Volume:23 ,  Issue: 7 )