By Topic

Crystallization of polycrystalline silicon thin film by excimer laser annealing, ELA

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
S. Noraiza Ab. Razak ; Universiti Teknologi Malaysia, Johore, Malaysia ; Noriah Bidin

Silicon thin film is widely used as transistor. It performance depends on it crystal structure. The larger the crystallization the better the current flow. The goal of this work is to enhance the grain size. In the attempt, an amorphous silicon thin film was prepared by low pressure physical vapour deposition (PVD) and dopant by cooper. The silicon film was heat treated for four hours, using conventional oven. The treated silicon film was then annealed by using ultraviolet light of argon fluoride (ArF) excimer laser, at variable energy density. The microstructure of thin film was observed using metalurgical technique via FESEM, and the grain size was precisely measured via image processing using Matrox Inspector software. The results obtained indicated that, the grain size of the a-Si film is increases via energy density. The critical energy density is found to be at 352 mJ cm'2, and the corresponds optimum grain size is 120 nm. Beyond that limits, the crystallization is reduced due to the melting causing the reduction of grain size.

Published in:

Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on

Date of Conference:

1-3 Dec. 2010