Referenced Items are not available for this document.
This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system. The device was fabricated in a UMC 0.18 μm CMOS process. The device has a cross-section of circular p+/n-well pn junction SPAD with 10 μm diameter active area. A low-doped p-guard ring (t-well layer) encircles the active area to prevent the premature reverse breakdown on a reverse biased diode breakdown.
Published in:
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Date of Conference: 1-3 Dec. 2010
- Page(s):
- 1 - 2
- Print ISBN:
- 978-1-4244-8853-7
- INSPEC Accession Number:
- 11773963
- Conference Location :
- Kuala Lumpur
- Digital Object Identifier :
- 10.1109/ESCINANO.2010.5700935
- Product Type:
- Conference Publications
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