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Growth rate modeling of boron doped silicon micro needle grown by VLS mechanism

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2 Author(s)
Hasan, K. ; Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh ; Islam, M.S.

The modeling of the growth rate of boron doped silicon micro needle grown at low temperature by vapour-liquid-solid (VLS) mechanism is reported in this paper. Intrinsic silicon micro needle can be doped by conventional diffusion process at 1100°C after VLS growth but in this work in-situ doping is used which requires lower temperature at around 700°C. Experimental data shows that the incorporation of doping into VLS system changes the properties of the micro needle compared to the intrinsic one. The mathematical model of the growth rate of silicon micro needle proposed in this paper is supported by the experimental values and a complete theoretical analysis is also included. These models will be useful to predict the length of the needle to be required for certain application.

Published in:

Electrical and Computer Engineering (ICECE), 2010 International Conference on

Date of Conference:

18-20 Dec. 2010