SrTiO3 thin films were grown to thicknesses in the range of 18–30 nm by atomic layer deposition using Sr(iPr3Cp)2 and (CpMe5)Ti(OMe)3 as strontium and titanium precursors at 250 and 300 °C. Water or ozone was used as oxygen precursor. The films were amorphous in as-deposited state, but crystallized as cubic SrTiO3 after annealing at 650 °C. The highest permittivity values, 60–65, were achieved in the films deposited with ozone at 300 °C. The films grown at 250 °C tended to possess markedly lower leakage currents than those grown at 300 °C.