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Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer deposition

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11 Author(s)
Garcia, H. ; Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, University of Valladolid, 47011 Valladolid, Spain ; Castan, H. ; Gómez, A. ; Duenas, S.
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SrTiO3 thin films were grown to thicknesses in the range of 18–30 nm by atomic layer deposition using Sr(iPr3Cp)2 and (CpMe5)Ti(OMe)3 as strontium and titanium precursors at 250 and 300 °C. Water or ozone was used as oxygen precursor. The films were amorphous in as-deposited state, but crystallized as cubic SrTiO3 after annealing at 650 °C. The highest permittivity values, 60–65, were achieved in the films deposited with ozone at 300 °C. The films grown at 250 °C tended to possess markedly lower leakage currents than those grown at 300 °C.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 1 )