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Browse Journals & Magazines > Applied Physics Letters ...> Volume:98 Issue:3 Help

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

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4 Author(s)
Eun Ji Kim ; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA ; Shandalov, Michael ; Saraswat, K.C. ; McIntyre, Paul C.

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Changes in phonon spectra and point defect populations that accompany crystallization of HfO2 were investigated by inelastic tunneling across Al/HfO2/SiO2/Si. Spectral features from tetragonal- and monoclinic-HfO2 vibrational modes are observed in annealed films, while they are not detected in as-deposited samples, consistent with selected area electron diffraction analysis. In addition to features indexed as vibrational modes, peaks whose amplitude and energy vary with bias history were detected for p-type Si. We attribute these features to point defect-related states in the HfO2 band gap and find good agreement between their energies and those predicted theoretically for oxygen vacancy levels in HfO2.

Published in:
Applied Physics Letters  (Volume:98 ,  Issue: 3 )

Date of Publication: Jan 2011

Page(s):
032108 - 032108-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3527977
Product Type:
Journals & Magazines
Date of Current Version :
24 January 2011
Issue Date :
Jan 2011

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