Referenced Items are not available for this document.
A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, photoconductive emitters made using a low-temperature-grown (LTG) GaAs layer annealed at different temperatures, and a photoconductive detector made using a Si-doped GaBiAs epitaxial layer, has been demonstrated. Useful spectral bandwidth of the system, that might be used in spectroscopy experiments, was up to 3 THz and its dynamical range exceeded 50 dB when the LTG GaAs emitter annealed at 420°C was used. It has been concluded that the breakdown field of as-grown layers is much larger than that of annealed layers; this process provides rather large optical-to-THz radiation conversion efficiencies for the emitters made from moderately annealed LTG GaAs.
Published in:
Electronics Letters
(Volume:47
,
Issue:
2
)
Date of Publication: January 2011
- Page(s):
- 130 - 132
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 11748702
- Digital Object Identifier :
- 10.1049/el.2010.3024
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 24 January 2011
- Issue Date :
- January 2011
- Sponsored by :
- Institution of Engineering and Technology
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