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Electrical Characterization of Thin-Film Structures With Redeposited Sidewalls

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3 Author(s)
Roy, D. ; NXP-TSMC Res. Center, NXP Semicond., Eindhoven, Netherlands ; in 't Zandt, M.A.A. ; Wolters, R.A.M.

Accurate electrical characterization of test structures and devices requires identification and correction for parasitic current paths in the measurement network. The sidewalls formed during reactive ion etching of thin-film phase-change material layers in argon plasma can result in parasitic current paths in the structures. In this paper, thin-film structures with redeposited sidewalls are realized, and they are experimentally characterized by electrical resistance measurements on van der Pauw test structures. The impact of conducting sidewalls on contact resistance measurements and data extraction from cross-bridge Kelvin resistor structures is discussed. The error introduced in the electrical resistance measurements from these test structures is analytically modeled. The impact on the electrical performance of devices due to the formation of sidewalls is also discussed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 4 )