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A novel manufacturable integration of Si Schottky contact/diode using the standard W-contact process (instead of the standard silicide process) is demonstrated. Up to 4× smaller junction area is enabled. Schottky barrier diode with the novel integration shows the potential to replace the bipolar junction transistor/p-n diodes for low-voltage/low-power system-on-a-chip and memory applications and for electrostatic discharge. It is also viable for complementary metal-oxide-semiconductor millimeter-wave (30-300 GHz) designs per its 1-THz cutoff frequency.