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Three-Dimensional Stacked IC (3D-SIC) is an emerging technology that provides heterogeneous integration, higher performance, and lower power consumption compared to planar ICs. Fabricating these 3D-SICs using Wafer-to-Wafer (W2W) stacking has several advantages including: high throughput, thin wafer and small die handling, and high TSV density. However, W2W stacking suffers from low compound yield. This paper investigates various matching processes by using different wafer matching criteria in order to maximize the compound yield. It first establishes a framework covering different matching processes and wafer matching criteria for both replenished and non-replenished wafer repositories. Thereafter, a subset of the framework is analyzed. The simulation results show that the compound yield not only depends on the number of stacked dies, die yield, and repository size, but it also strongly depends on the used matching process and the wafer matching criteria. Moreover, by choosing an appropriate wafer matching scenario (e.g., wafer matching process, criterion etc.), the compound yield can be improved up to 13.4% relative to random W2W stacking.