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Room temperature gate-controlled electron spin relaxation time in (110) GaAs/AlGaAs quantum wells

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3 Author(s)
Iba, S. ; Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan ; Koh, S. ; Kawaguchi, Hitoshi

We have successfully fabricated a high-quality (110) p-i-n structure with GaAs/AlGaAs quantum wells (QWs) and demonstrated a tenfold modulation of electron spin relaxation time in the QWs by applying an electric field at room temperature.

Published in:

IEEE Photonics Society, 2010 23rd Annual Meeting of the

Date of Conference:

7-11 Nov. 2010