Close category search window
 

Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Everaert, J. L. ; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium ; Rosseel, E. ; Pap, A. ; Meszaros, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3521384 

An analysis method is presented for noncontact metrology for inversion charge carrier mobility. It is based on determining the sheet resistance of the inversion charge carriers by charge spreading metrology. To calculate the mobility, the amount of inversion charge carriers must be accurately known. A method is evaluated based on the increment of the sheet conductance in function of the corona charge.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 1 )

Date of Publication: Jan 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.