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Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

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7 Author(s)
Okada, Yoshitaka ; Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan ; Morioka, T. ; Yoshida, K. ; Oshima, R.
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We have developed a technique to fabricate quantum dot (QD) solar cells with direct doping of Si into InAs QDs in GaNAs strain-compensating matrix in order to control the quasi-Fermi level of intermediate QD states. The Si atoms were evenly incorporated into QDs during the assembling stage of growth such that a uniform array of partially filled QDs has been obtained. Nonradiative recombination losses were also reduced by Si doping and a photocurrent increase due to two-step photon absorption was clearly measured at room temperature detected under filtered air-mass 1.5 solar spectrum.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 2 )