Cart (Loading....) | Create Account
Close category search window
 

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Himchan Oh ; Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea ; Sung-Min Yoon ; Min Ki Ryu ; Chi-Sun Hwang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3540500 

The gate bias dependence on the negative bias instability under illumination was examined. As the gate bias got more negative, dominant mechanism was changed from simple charge trapping to that accompanied by generation of subgap states. Degree of threshold voltage shift was not monotonously dependent on the magnitude of negative gate bias. It is strongly related with the corresponding instability modes for different gate bias regimes. The transition of instability mechanism depends on how much the gate bias stabilizes ionized oxygen vacancy states.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 3 )

Date of Publication:

Jan 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.