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Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations

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4 Author(s)
Yongjin Park ; Advanced Materials Div., Korea Research Institute of Chemical Technology, Daejeon 305-600, Rep. of Korea ; Ki-jeong Kong ; Hyunju Chang ; Mincheol Shin

The band gap and electric permeability changes across the Si/SiO2 interface of a MOS device were calculated based on the density function theory. The band gap changes non-abruptly at the interface with a transition region of 5 A toward the oxide. The calculated dielectric constants change almost abruptly at Si/SiO2 interface. Thus-obtained band gap profile and spatial behavior of dielectric constants were used in a device simulation of an ultra-thin-body n-type double-gate MOSFET. The potential profile in the channel was calculated by self-consistently solving the two-dimensional Poisson-Schrodinger equations. The gate leakage current was calculated accurately using the three-terminal non-equilibrium Green's function approach. The effect of the band gap transition across the Si/SiO2 interface on the device performance is investigated in detail.

Published in:

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Date of Conference:

17-20 Aug. 2010