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Organic/inorganic hybrid gate dielectric for high-performance and low-power organic thin-film transistors

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4 Author(s)
Shin, Woo Cheol ; Dept. of Electr. Eng., KAIST, Daejeon, South Korea ; Hanul Moon ; Seunghyup Yoo ; Jin Cho, Byung

High-performance and low-voltage OTFTs have been demonstrated by employing a multilayer dielectric structure where ultrathin PVP (8 nm) is coated on top of high-κ HfLaO (20 nm). The multilayer dielectric exhibited a low leakage current density of 4.6×10-8 A/cm2 at -3 V while maintaining a high capacitance density of 340 nF/cm2. The device with the multilayer dielectric showed superior performance as compared to that of the device with single HfLaO (20 nm) dielectric such as a low threshold voltage (VT) of 0.5 V, a low subthreshold slope (SS) of 0.09 V/decade, a high on-off current ratio (Ion/Ioff) of 5×105 and a saturation mobility (μSAT) of 0.34 cm2V-1s-1 along with a low operating voltage of -2 V. Due to the enhanced μSAT with the high gate capacitance of the device with multilayer dielectric, we also achieved a high μSATCox of 114 nF/Vs, thereby leading to superior drain current drivability.

Published in:

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Date of Conference:

17-20 Aug. 2010